Preparation and Physical Properties of CuxZn1-xS Thin Films Deposited by Metal Organic Chemical Vapour Deposition Technique

Copper Zinc Sulphide (CuxZn1-xS) thin films were prepared and deposited using metal organic chemical vapour deposition (MOCVD) technique. The films were studied using Rutherford backscattering (RBS) spectroscopy for elemental composition and thickness, X-ray diffraction (XRD) for crystallographic structure, Scanning electron microscopy (SEM) for surface morphology and Ultraviolet-Visible spectroscopy analysis for optical characterization. Experimental results showed that all the films were polycrystalline with good adherent with the substrate. The direct optical band gap changes from 2.20 eV to 3.42 eV for different values of x with an average transmittance of above 80%. SEM analysis showed that the deposited films are dense in nature with well defined grains of different sizes. The study demonstrates that the properties of the deposited films were strongly influenced by the copper / zinc concentrations in CuxZn1-xS matrix.